j105/106/107 vishay siliconix document number: 70230 s-04028?rev. d, 04-jun-01 www.vishay.com 7-1 n-channel jfets
part number v gs(off) (v) r ds(on) max ( ) i d(off) typ (pa) t on typ (ns) j105 ?4.5 to ?10 3 10 14 j106 ?2 to ?6 6 10 14 j107 ?0.5 to ?4.5 8 10 14
low on-resistance: j105 < 3 fast switching?t on : 14 ns low leakage: 10 pa low capacitance: 20 pf low insertion loss low error voltage high-speed analog circuit performance negligible ?off-error,? excellent accuracy good frequency response eliminates additional buffering analog switches choppers sample-and-hold normally ?on? switches current limiters the j105/106/107 are high-performance jfet analog switches designed to offer low on-resistance and fast switching. r ds(on) <3 is guaranteed for the j105 making this device the lowest of any commercially available jfet. the low cost to-226aa (to-92) plastic package is available in a wide range of tape-and-reel options (see packaging information). for similar products in to-206ac (to-52) packaging, see the u290/291 data sheet. to-226aa (to-92) top view d g s 1 2 3
gate-drain, gate-source voltage ?25 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ?55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c
j105/106/107 vishay siliconix www.vishay.com 7-2 document number: 70230 s-04028 ? rev. d, 04-jun-01
limits j105 j106 j107 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 35 ? 25 ? 25 ? 25 v gate-source cutoff voltage v gs(off) v ds = 5 v, i d = 1 a ? 4.5 ? 10 ? 2 ? 6 ? 0.5 ? 4.5 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 500 200 100 ma v gs = ? 15 v, v ds = 0 v ? 0.02 ? 3 ? 3 ? 3 gate reverse current i gss t a = 125 c ? 10 gate operating current b i g v dg = 10 v, i d = 25 ma ? 0.01 na v ds = 5 v, v gs = ? 10 v 0.01 3 3 3 drain cutoff current i d(off) t a = 125 c 5 drain-source on-resistance r ds(on) v gs = 0 v, i d = 1 ma 3 6 8 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance b g fs v ds = 10 v, i d = 25 ma 55 common-source output conductance b g os v ds = 10 v, i d = 25 ma f = 1 khz 5 ms drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma f = 1 khz 3 6 8 common-source input capacitance c iss v ds = 0 v, v gs = 0 v f = 1 mhz 120 160 160 160 common-source reverse transfer capacitance c rss v ds = 0 v, v gs = ? 10 v f = 1 mhz 20 35 35 35 pf equivalent input noise voltage e n v dg = 10 v, i d = 25 ma f = 1 khz 3 nv ? hz switching t d(on) 6 turn-on time t r v dd = 1.5 v, v gs(h) = 0 v 8 t d(off) v dd = 1.5 v, v gs(h) = 0 v see switching diagram 5 ns turn-off time t f 9 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nva b. pulse test: pw 300 s duty cycle 3%.
j105/106/107 vishay siliconix document number: 70230 s-04028 ? rev. d, 04-jun-01 www.vishay.com 7-3 10 0 ? 6 ? 8 ? 10 ? 2 8 4 2 0 20 16 8 4 0 10 100 1000 2 .0 1.6 0 ? 55 25 125 ? 15 85 500 68 210 400 200 100 0 0 ? 8 ? 4 ? 2 ? 10 8 4 0 20 03040 10 50 16 8 4 0 on-resistance and drain current vs. gate-source cutoff voltage on-resistance vs. drain current turn-on switching turn-off switching on-resistance vs. temperature output characteristics v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) t a ? temperature ( c) v ds ? drain-source voltage (v) v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) r ds @ i d = 10 ma, v gs = 0 v i dss @ v ds = 10 v, v gs = 0 v i dss r ds t a = 25 c v gs(off) = ? 3 v ? 5 v ? 8 v i d = 10 ma r ds changes 0.7%/ c t r approximately independent of i d v dd = 1.5 v, r g = 50 v gs(l) = ? 10 v t d(on) @ i d = 10 ma t d(off) v gs(off) = ? 8 v v gs(off) = ? 3 v t d(off) independent of device v gs(off ) v dd = 1.5 v, v gs(l) = ? 10 v 6 1.2 0.8 0.4 ? 4 12 10 8 4 2 0 6 ? 35 5 45 65 105 300 4 ? 6 12 20 v gs(off) = ? 5 v t r v gs(off) = ? 3 v ? 5 v ? 8 v t d(on) @ i d = 30 ma v gs = 0 v ? 1.0 v ? 0.5 v ? 1.5 v ? 2.0 v ? 2.5 v ? 3.0 v t f switching time (ns) switching time (ns) i d ? drain current (ma) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) i dss ? saturation drain current (ma)
j105/106/107 vishay siliconix www.vishay.com 7-4 document number: 70230 s-04028 ? rev. d, 04-jun-01 200 100 10 1 1 10 100 20 10 1 0.1 1 10 100 10 100 1 k 100 k 10 k 300 0 ? 6 260 180 140 100 ? 8 ? 10 ? 4 ? 2 30 24 12 6 0 01216 8 420 100 10 1 150 0 ? 12 ? 16 ? 8 ? 4 ? 20 120 90 60 30 0 capacitance vs. gate-source voltage transconductance vs. drain current forward transconductance and output conductance vs. gate-source cutoff voltage gate leakage current output conductance vs. drain current noise voltage vs. frequency v gs ? gate-source voltage (v) i d ? drain current (ma) i d ? drain current (ma) f ? frequency (hz) v gs(off) ? gate-source cutoff voltage (v) v dg ? drain-gate voltage (v) v ds = 0 v f = 1 mhz c iss c rss v dg = 10 v i d = 10 ma g fs and g os @ v ds = 10 v v gs = 0 v, f = 1 khz g fs g os i gss @ 125 c i gss @ 25 c t a = 125 c t a = 25 c 100 ma 100 ma 25 ma 1 pa 100 pa 10 pa 100 na 1 na 10 na v ds = 10 v f = 1 khz t a = ? 55 c 125 c t a = ? 55 c 125 c 220 18 25 ma 25 c v gs(off) = ? 5 v v ds = 10 v f = 1 khz v gs(off) = ? 5 v 25 c nv e n ? hz ) ( ? noise voltage c (pf) g os ? output conductance (ms) g os ? output conductance (ms) i g ? gate leakage g fs ? forward transconductance (ms) g os ? output conductance (ms) g fs ? forward transconductance (ms)
j105/106/107 vishay siliconix document number: 70230 s-04028 ? rev. d, 04-jun-01 www.vishay.com 7-5
j105 j106 j107 v gs(l) ? 12v ? 7v ? 5v r l * i d(on) 28 ma 27 ma 26 ma *non-inductive input pulse sampling scope rise time < 1 ns fall time < 1 ns pulse width 100 ns prf 1 mhz rise time 0.4 ns input resistance 10 m input capacitance 1.5 pf 51 51 1 k v in scope v dd r l out v gs(h) v gs(l)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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